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sq9407ey www.vishay.com vishay siliconix s11-1220-rev. a, 16-jun-11 1 document number: 67582 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 automotive p-channel 60 v (d-s) 175 c mosfet features ? halogen-free according to iec 61249-2-21 definition ?trenchfet ? power mosfet ? aec-q101 qualified c ?100 % r g and uis tested ? compliant to rohs directive 2002/95/ec notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. when mounted on 1" squa re pcb (fr-4 material). c. parametric verification ongoing. product summary v ds (v) - 60 r ds(on) ( ? ) at v gs = - 10 v 0.085 r ds(on) ( ? ) at v gs = - 4.5 v 0.115 i d (a) - 4.6 configuration single s g d p-channel mosfet so-8 sd sd sd gd 5 6 7 8 top view 2 3 4 1 ordering information package so-8 lead (pb)-free and ha logen-free sq9407ey-t1-ge3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds - 60 v gate-source voltage v gs 20 continuous drain current t c = 25 c i d - 4.6 a t c = 125 c - 2.6 continuous source curr ent (diode conduction) i s - 3.4 pulsed drain current a i dm - 18.5 single pulse avalanche current l = 0.1 mh i as - 20 single pulse avalanche energy e as 20 mj maximum power dissipation a t c = 25 c p d 3.75 w t c = 125 c 1.25 operating junction and storage temperature range t j , t stg - 55 to + 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount b r thja 100 c/w junction-to-foot (drain) r thjf 40
sq9407ey www.vishay.com vishay siliconix s11-1220-rev. a, 16-jun-11 2 document number: 67582 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design , not subject to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 60 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1.5 - 2.0 - 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = - 60 v - - - 1 a v gs = 0 v v ds = - 60 v, t j = 125 c - - - 50 v gs = 0 v v ds = - 60 v, t j = 175 c - - - 150 on-state drain current a i d(on) v gs = - 10 v v ds ??? - 5 v - 12 - - a drain-source on-state resistance a r ds(on) v gs = - 4.5 v i d = - 2.5 a - 0.087 0.115 ? v gs = - 10 v i d = - 3.5 a - 0.067 0.085 v gs = - 10 v i d = - 3.5 a, t j = 125 c - - 0.143 v gs = - 10 v i d = - 3.5 a, t j = 175 c - - 0.176 forward transconductance b g fs v ds = - 15 v, i d = - 3.5 a - 10 - s dynamic b input capacitance c iss v gs = 0 v v ds = - 30 v, f = 1 mhz - 912 1140 pf output capacitance c oss - 100 125 reverse transfer capacitance c rss -6075 total gate charge c q g v gs = - 10 v v ds = - 30 v, i d = - 4.3 a - 26.5 40 nc gate-source charge c q gs -3.8- gate-drain charge c q gd -5.8- gate resistance r g f = 1 mhz 3.5 7.1 10.7 ? turn-on delay time c t d(on) v dd = - 30 v, r l = 8.8 ? i d ? - 3.4 a, v gen = - 10 v, r g = 1 ? -1117 ns rise time c t r -1320 turn-off delay time c t d(off) -3654 fall time c t f -812 source-drain diode ratings and characteristics b pulsed current a i sm - - - 18.5 a forward voltage v sd i f = - 3 a, v gs = 0 v - - 0.84 - 1.1 v
sq9407ey www.vishay.com vishay siliconix s11-1220-rev. a, 16-jun-11 3 document number: 67582 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current transfer characteristics transconductance capacitance 0 4 8 12 16 20 0 2 4 6 8 10 i d - drain current (a) v d s -drain-to- s ource voltage (v) v gs = 10 v thru 5 v v gs = 3 v v gs = 4 v 0.0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = 25 c t c = - 55 c t c = 125 c 0.0 0.1 0.2 0.3 0.4 0.5 0 6 12 18 24 30 r d s (on) -on-re s i s tance () i d -drain current (a) v gs = 4.5 v v gs = 10 v 0 4 8 12 16 20 0 2 4 6 8 10 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = - 55 c t c = 125 c t c = 25 c 0 4 8 12 16 20 0 2 4 6 8 10 g f s -tran s conductance ( s ) i d -drain current (a) t c = 125 c t c = - 55 c t c = 25 c 0 300 600 900 1200 1500 0 10 20 30 40 50 60 c - capacitance (pf) v d s -drain-to- s ource voltage (v) c i ss c o ss c r ss
sq9407ey www.vishay.com vishay siliconix s11-1220-rev. a, 16-jun-11 4 document number: 67582 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) gate charge source drain diode forward voltage threshold voltage on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage drain source breakdown vs . junction temperature 0 2 4 6 8 10 0 6 12 18 24 30 v gs - g ate-to- s ource voltage (v) q g -total g ate charge (nc) i d = 4.3 a v d s = 30 v 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - s ource current (a) v s d - s ource-to-drain voltage (v) t j = 25 c t j = 150 c -0.4 -0.1 0.2 0.5 0.8 1.1 - 50 - 25 0 25 50 75 100 125 150 175 v gs (th) variance (v) t j -temperature ( c) i d = 250 a i d = 5 ma 0.6 0.9 1.2 1.5 1.8 2.1 - 50 - 25 0 25 50 75 100 125 150 175 r d s (on) -on-re s i s tance (normalized) t j - junction temperature ( c) i d = 3.5 a v gs = 4.5 v v gs = 10 v 0.0 0.1 0.2 0.3 0.4 0.5 0246810 r d s (on) -on-re s i s tance () v gs - g ate-to- s ource voltage (v) t j = 150 c t j = 25 c -80 -75 -70 -65 -60 - 50 - 25 0 25 50 75 100 125 150 175 v d s -drain-to- s ource voltage (v) t j - junction temperature ( c) i d = 1 ma
sq9407ey www.vishay.com vishay siliconix s11-1220-rev. a, 16-jun-11 5 document number: 67582 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d - drain current (a) v d s -drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecified 100 m s limited by r d s (on) * 1 m s i dm limited t c = 25 c s ingle pul s e bvd ss limited 10 m s 100 s 1 s 10 s , dc 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 100 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
sq9407ey www.vishay.com vishay siliconix s11-1220-rev. a, 16-jun-11 6 document number: 67582 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-foot note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction-to-ambient (25 c) - normalized transient thermal impedance junction-to-foot (25 c) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circ uit board - fr4, size 1" x 1" x 0. 062", double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldwide manufactu ring capability. products may be manufact ured at one of seve ral qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67582 . 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance
ordering information www.vishay.com vishay siliconix revision: 25-aug-15 1 document number: 66624 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 so-8 ordering codes for the sq rugged series power mosfets in the so-8 package: note a. old ordering code is obsolete and no longer valid for new orders datasheet part number o ld ordering code a new ordering code sq4182ey sq4182ey-t1-ge3 sq4182ey-t1_ge3 sq4184ey sq4184ey-t1-ge3 sq4184ey-t1_ge3 sq4282ey sq4282ey-t1-ge3 sq4282ey-t1_ge3 sq4284ey sq4284ey-t1-ge3 sq4284ey-t1_ge3 sq4401ey sq4401ey-t1-ge3 sq4401ey-t1_ge3 sq4410ey sq4410ey-t1-ge3 sq4410ey-t1_ge3 sq4425ey sq4425ey-t1-ge3 sq4425ey-t1_ge3 sq4431ey sq4431ey-t1-ge3 sq4431ey-t1_ge3 sq4435ey sq4435ey-t1-ge3 sq4435ey-t1_ge3 sq4470ey sq4470ey-t1-ge3 sq4470ey-t1_ge3 sq4483beey sq4483beey-t1-ge3 sq4483beey-t1_ge3 sq4483ey - sq4483ey-t1_ge3 sq4532aey - sq4532aey-t1_ge3 sq4840ey sq4840ey-t1-ge3 sq4840ey-t1_ge3 sq4850ey sq4850ey-t1-ge3 sq4850ey-t1_ge3 sq4917ey sq4917ey-t1-ge3 sq4917ey-t1_ge3 sq4920ey sq4920ey-t1-ge3 sq4920ey-t1_ge3 sq4937ey sq4937ey-t1-ge3 sq4937ey-t1_ge3 sq4940aey sq4940aey-t1-ge3 sq4940aey-t1_ge3 sq4946aey sq4946aey-t1-ge3 sq4946aey-t1_ge3 sq4949ey sq4949ey-t1-ge3 sq4949ey-t1_ge3 sq4961ey sq4961ey-t1-ge3 sq4961ey-t1_ge3 sq9407ey sq9407ey-t1-ge3 sq9407ey-t1_ge3 sq9945bey sq9945bey-t1-ge3 sq9945bey-t1_ge3
vishay siliconix package information document number: 71192 11-sep-06 www.vishay.com 1 dim millimeters inches min max min max a 1.35 1.75 0.053 0.069 a 1 0.10 0.20 0.004 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0808 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all le a d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (g a ge pl a ne) s oic (narrow): 8-lead jedec p a rt n u m b er: m s -012 s
vishay siliconix trenchfet ? power mosfets application note 808 mounting little foot ? , so-8 power mosfets application note document number: 70740 www.vishay.com revision: 18-jun-07 1 wharton mcdaniel surface-mounted little foot power mosfets use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. leadframe materials and design, molding compounds, and die attach materials have been changed, while the footpr int of the packages remains the same. see application note 826, recommended minimum pad patterns with outline drawin g access for vishay siliconix mosfets, ( http://www.vishay.com/ppg?72286 ), for the basis of the pad design for a little foot so-8 power mosfet. in converting this recommended minimum pad to the pad set for a power mosfet, designers must make two connections: an electrical connection and a thermal connection, to draw heat away from the package. in the case of the so-8 p ackage, the thermal connections are very simple. pins 5, 6, 7, and 8 are the drain of the mosfet for a single mosfet package and are connected together. in a dual package, pi ns 5 and 6 are one drain, and pins 7 and 8 are the other drain. for a small-signal device or integrated circuit, typical co nnections would be made with traces that are 0.020 inches wi de. since the drain pins serve the additional function of providing the thermal connection to the package, this level of connection is inadequate. the total cross section of the copp er may be adequate to carry the current required for the a pplication, but it presents a large thermal impedance. also , heat spreads in a circular fashion from the heat source. in this case the drain pins are the heat sources wh en looking at heat spread on the pc board. figure 1. single mosfet so-8 pad pattern with copper spreading figure 2. dual mosfet so-8 pad pattern with copper spreading the minimum recommended pad patterns for the single-mosfet so-8 with copp er spreading (figure 1) and dual-mosfet so-8 with copper spreading (figure 2) show the starting point for utilizing th e board area available for the heat-spreading copper. to creat e this pattern, a plane of copper overlies the drain pins . the copper plane connects the drain pins electrically, but more importantly provides planar copper to draw heat fr om the drain leads and start the process of spreading the heat so it can be dissipated into the ambient air. these patterns use all the available area underneath the body for this purpose. since surface-mounted packag es are small, and reflow soldering is the most comm on way in which these are affixed to the pc board, ?t hermal? connections from the planar copper to the pads have not been used. even if additional planar copper area is used, there should be no problems in the soldering process. the actual solder connections are defined by the solder mask openings. by combining the basic footprint wi th the copper plane on the drain pins, the solder mask ge neration occurs automatically. a final item to keep in mind is the width of the power traces. the absolute minimum pow er trace width must be determined by the amount of current it has to carry. for thermal reasons, this minimum width should be at least 0.020 inches. the use of wide traces connected to the drain plane provides a low impedance path for heat to move away from the device. 0.027 0.69 0.07 8 1.9 8 0.2 5.07 0.196 5.0 0.2 88 7.3 0.050 1.27 0.027 0.69 0.07 8 1.9 8 0.2 5.07 0.0 88 2.25 0.2 88 7.3 0.050 1.27 0.0 88 2.25
application note 826 vishay siliconix www.vishay.com document number: 72606 22 revision: 21-jan-08 application note recommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) return to index return to index
legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.

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